GROUP 5 METAL PRECURSOR COMPOUND FOR THIN FILM DEPOSITION, AND METHOD FOR FORMING GROUP 5 METAL-CONTAINING THIN FILM BY USING SAME

• Main Authors: BAIK, Sun Young, KIM, Shin Beom, CHO, Kyu Ho, LEE, Tae Young, JEONG, Ju Hwan, JI, Sung Jun, CHOI, Woong Jin
• Format: Patent
• Language: English; French; Korean
• Published: 12.09.2024
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to an embodiment of the present invention, a group 5 metal precursor compound is represented by the following chemical formula 1. [Chemical formula 1] Therefore, the group 5 metal precursor compound according to an embodiment of the present invention has excellent thermal stability, exists in a liquid state at room temperature, and is highly volatile so as to be advantageous when applied to a thin film formation process. In addition, if the group 5 metal precursor compound according to an embodiment of the present invention is used, a group 5 metal thin film having a low residue amount and uniform physical properties can be obtained, and the thickness of the thin film can be readily controlled. Selon un mode de réalisation de la présente invention, un composé précurseur de métal du groupe 5 est représenté par la formule chimique 1 suivante. [Formule chimique 1] Par conséquent, le composé précurseur de métal du groupe 5 selon un mode de réalisation de la présente invention possède une excellente stabilité thermique, existe dans un état liquide à température ambiante, et est hautement volatil de façon à être avantageux lorsqu'il est appliqué à un processus de formation de couche mince. De plus, si le composé précurseur de métal du groupe 5 selon un mode de réalisation de la présente invention est utilisé, une couche mince de métal du groupe 5 ayant une faible quantité de résidus et des propriétés physiques uniformes peut être obtenu, et l'épaisseur de la couche mince peut être facilement maîtrisée. 본 발명의 실시예에 의하면, 5족 금속 전구체 화합물은 하기 화학식 1로 표시된다. [화학식 1] 따라서, 본 발명의 일 실시예에 따른 5족 금속 전구체 화합물은 열 안정성이 우수하고, 상온에서 액체 상태로 존재하며, 휘발성이 높아 박막 형성 공정에 적용하기에 유리한 이점이 있다. 또한, 본 발명의 일 실시예에 따른 5족 금속 전구체 화합물을 사용하는 경우, 잔여물 함량이 적고 균일한 물성을 갖는 5족 금속 박막을 얻을 수 있고, 박막의 두께를 용이하게 조절할 수 있다.