FURNACE TUBE FOR PLASMA ENHANCED THIN FILM DEPOSITION

• Main Authors: LV, Ce, CHEON, Jong Hyeok, ZHANG, Dahai, CHEN, Guoqiang, LEE, Dong Keun, CHOI, Chi Ku, WANG, Hui, ZHOU, Dongcheng, CHEON, Ga Myeol, SHEN, Hui, WANG, Jian, JIA, Shena
• Format: Patent
• Language: Chinese; English; French
• Published: 22.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed in the present invention is a furnace tube for plasma enhanced thin film deposition, the furnace tube comprising: a process tube, wherein a reaction chamber and at least one ionization chamber are constructed inside the process tube; a gas supply tube, which is used for conveying to the ionization chamber a process gas to be ionized, said process gas entering inside the reaction chamber after being ionized in the ionization chamber, so as to allow for deposition of a corresponding thin film on the surface of a substrate, or undergo an adsorption reaction to realize layer-by-layer growth of the thin film on the surface of the substrate; and a first electrode and a second electrode, which are located inside the process tube, and are located in the middle of the ionization chamber, wherein the first electrode and/or the second electrode are supported by a baffle, one end of the baffle being connected to a corresponding electrode, and the other end of the baffle being connected to an inner wall of the i