COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM

• Main Authors: SAKURAI, Atsushi, FUKUSHIMA, Ryota, HARANO, Kazuki, HATASE, Masako, FUSE, Wakana, NISHIDA, Akihiro, MURATA, Kiyoshi
• Format: Patent
• Language: English; French; Japanese
• Published: 08.08.2024
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present disclosure provides a compound represented by general formula (1), a raw material for thin film formation containing said compound, a thin film formed from the material for thin film formation, and a method for producing a thin film. (In the formula, R1 and R2 each independently represent a C1-8 alkyl group, and R3 represents a hydrogen atom or a C1-5 alkyl group. However, R1 and R2 are different groups.) La présente divulgation concerne un composé représenté par la formule générale (1), une matière première pour la formation de couche mince contenant ledit composé, une couche mince formée à partir du matériau pour la formation de couche mince, et un procédé de production d'une couche mince. (Dans la formule, R1 et R2 représentent chacun indépendamment un groupe alkyle en C1-8, et R3 représente un atome d'hydrogène ou un groupe alkyle en C1-5. Cependant, R1 et R2 sont des groupes différents.) 本開示は、下記一般式（１）で表される化合物、該化合物を含む薄膜形成用原料、該薄膜形成用材料から形成される、及び薄膜の製造方法を提供する。 （式中、Ｒ1及びＲ2は、各々独立して、炭素原子数１～８のアルキル基を表し、Ｒ3は水素原子又は炭素原子数１～５のアルキル基を表す。但し、Ｒ1とＲ2は異なる基である。）