PLASMA GENERATION SYSTEM

• Main Authors: HONG, Myung-Ki, PARK, Sung-Jin
• Format: Patent
• Language: English; French; Korean
• Published: 25.07.2024
• Subjects: ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FOODS OR FOODSTUFFS; FOODS, FOODSTUFFS, OR NON-ALCOHOLIC BEVERAGES, NOT COVERED BYSUBCLASSES A23B - A23J; HUMAN NECESSITIES; PLASMA TECHNIQUE; PRESERVATION OF FOODS OR FOODSTUFFS, IN GENERAL; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; THEIR PREPARATION OR TREATMENT, e.g. COOKING, MODIFICATION OFNUTRITIVE QUALITIES, PHYSICAL TREATMENT; THEIR TREATMENT, NOT COVERED BY OTHER CLASSES

The present invention relates to a plasma generation system, and the plasma generation system according to the present invention comprises: a first plasma generation device (100) which is driven by first power per unit area and receives a supply gas to generate a first generated gas; and a second plasma generation device (200) which is driven by second power per unit area that is greater than the first power per unit area, and receives the first generated gas from the first plasma generation device (100) to generate a second generated gas. La présente invention concerne un système de génération de plasma, et le système de génération de plasma selon la présente invention comprend : un premier dispositif de génération de plasma (100) qui est entraîné par une première puissance par unité de surface et reçoit un gaz d'alimentation pour générer un premier gaz généré ; et un second dispositif de génération de plasma (200) qui est entraîné par une seconde puissance par unité de surface qui est supérieure à la première puissance par unité de surface, et reçoit le premier gaz généré à partir du premier dispositif de génération de plasma (100) pour générer un second gaz généré. 본 발명은 플라즈마 생성 시스템에 관한 것으로, 본 발명에 따른 플라즈마 생성 시스템은 제1 단위면적당 전력으로 구동되고, 공급 기체를 공급받아 제1 생성기체를 생성하는 제1 플라즈마 생성 디바이스(100), 및 제1 단위면적당 전력보다 큰 제2 단위면적당 전력으로 구동되고, 제1 플라즈마 생성 디바이스(100)로부터 제1 생성기체를 전달받아, 제2 생성기체를 생성하는 제2 플라즈마 생성 디바이스(200)를 포함한다.