TREATMENTS TO ENHANCE MATERIAL STRUCTURES
A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfac...
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| Main Authors | , , |
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| Format | Patent |
| Language | English French |
| Published |
18.07.2024
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post- treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.
Un procédé de formation d'une structure de semi-conducteur consiste à effectuer un processus de prétraitement, comprenant le recuit d'une surface d'un substrat dans une atmosphère d'hydrogène (H2), à effectuer un processus de formation d'interface, comprenant l'oxydation thermique de la surface prétraitée du substrat pour former une couche interfaciale, et à effectuer un processus de post-traitement, comprenant le recuit d'une surface de la couche interfaciale formée dans une atmosphère d'ammoniac (NH3). |
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| AbstractList | A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post- treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient.
Un procédé de formation d'une structure de semi-conducteur consiste à effectuer un processus de prétraitement, comprenant le recuit d'une surface d'un substrat dans une atmosphère d'hydrogène (H2), à effectuer un processus de formation d'interface, comprenant l'oxydation thermique de la surface prétraitée du substrat pour former une couche interfaciale, et à effectuer un processus de post-traitement, comprenant le recuit d'une surface de la couche interfaciale formée dans une atmosphère d'ammoniac (NH3). |
| Author | GUARINI, Theresa Kramer HUNG, Steven C. H SWENBERG, Johanes F |
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| DocumentTitleAlternate | TRAITEMENTS PERMETTANT D'AMÉLIORER DES STRUCTURES DE MATÉRIAU |
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| Snippet | A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2)... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | TREATMENTS TO ENHANCE MATERIAL STRUCTURES |
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