TREATMENTS TO ENHANCE MATERIAL STRUCTURES

A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfac...

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Bibliographic Details
Main Authors GUARINI, Theresa Kramer, HUNG, Steven C. H, SWENBERG, Johanes F
Format Patent
LanguageEnglish
French
Published 18.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor structure includes performing a pre- treatment process, including annealing a surface of a substrate in a hydrogen (H2) ambient, performing an interfacial formation process, including thermally oxidizing the pre-treated surface of the substrate to form an interfacial layer, and performing a post- treatment process, including annealing a surface of the formed interfacial layer in an ammonia (NH3) ambient. Un procédé de formation d'une structure de semi-conducteur consiste à effectuer un processus de prétraitement, comprenant le recuit d'une surface d'un substrat dans une atmosphère d'hydrogène (H2), à effectuer un processus de formation d'interface, comprenant l'oxydation thermique de la surface prétraitée du substrat pour former une couche interfaciale, et à effectuer un processus de post-traitement, comprenant le recuit d'une surface de la couche interfaciale formée dans une atmosphère d'ammoniac (NH3).
Bibliography:Application Number: WO2023US84576