METHOD FOR MANUFACTURING GROUP III NITRIDE POWER SEMICONDUCTOR DEVICE USING EPITAXIAL DIES
The present invention relates to a method for manufacturing a Group III nitride power semiconductor device using epitaxial dies, by which a high-quality Group III nitride power semiconductor device can be manufacturing by cutting a substrate having epitaxially grown thereon a Group III nitride semic...
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Main Authors | , , , |
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Format | Patent |
Language | English French Korean |
Published |
27.06.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for manufacturing a Group III nitride power semiconductor device using epitaxial dies, by which a high-quality Group III nitride power semiconductor device can be manufacturing by cutting a substrate having epitaxially grown thereon a Group III nitride semiconductor layer so as to form a plurality of epitaxial dies, and then binding the formed plurality of epitaxial dies to a highly heat-dissipating support substrate.
La présente invention concerne un procédé de fabrication d'un dispositif à semi-conducteur d'alimentation au nitrure de Groupe III utilisant des puces épitaxiales, par lequel un dispositif à semi-conducteur d'alimentation au nitrure de Groupe III de haute qualité peut être fabriqué par découpe d'un substrat sur lequel est formée par croissance épitaxiale une couche semi-conductrice au nitrure de Groupe III de façon à former une pluralité de puces épitaxiales, puis par liaison de la pluralité formée de puces épitaxiales à un substrat de support à dissipation de chaleur élevée.
본 발명은 그룹3족 질화물 반도체층이 에피택시(Epitaxy) 성장된 기판을 절단하여 복수의 에피택시 다이(Epitaxy Die)를 제조한 후, 제조된 복수의 에피택시 다이를 고방열 지지기판에 접합함으로써 고품질의 그룹3족 질화물 전력반도체 소자를 제조할 수 있는 에피택시 다이를 이용한 그룹3족 질화물 전력반도체 소자 제조 방법에 관한 것이다. |
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Bibliography: | Application Number: WO2023KR20519 |