ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION-BASED METHOD FOR WAFER-LEVEL MANUFACTURING SELENIDE TIN THIN FILM

• Main Authors: SUH, Joonki, KIM, Sungyeon
• Format: Patent
• Language: English; French; Korean
• Published: 20.06.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention comprises the steps of: introducing a tin precursor into a chamber; introducing a selenium precursor into the chamber; decomposing the precursors in a first zone in the chamber; and synthesizing a tin selenide thin film in a second zone in the chamber, wherein the flow rates of the tin and selenium precursors are controlled by a mass flow controller (MFC). La présente invention comprend les étapes consistant à : introduire un précurseur d'étain dans une chambre ; introduire un précurseur de sélénium dans la chambre ; décomposer les précurseurs dans une première zone de la chambre ; et synthétiser un film mince de séléniure d'étain dans une seconde zone dans la chambre, les débits des précurseurs d'étain et de sélénium étant commandés par un dispositif de commande de débit massique (MFC). 본 발명은 챔버 내에 주석 전구체를 도입하는 단계; 챔버 내에 셀레늄 전구체를 도입하는 단계; 챔버 내의 제1 구역에서 전구체를 분해하는 단계; 및 챔버 내의 제2 구역에서 셀렌화 주석 박막을 합성하는 단계를 포함하고, 상기 주석 전구체 및 상기 셀레늄 전구체의 유량은 질량 유량계(MFC, Mass Flow Controller)로 제어한다.