STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS

A semiconductor structure is provided that includes a stacked transistor including at least one transistor stacked over another transistor and a non-stacked transistor integrated on a same wafer. Both the stacked transistor and the non-stacked transistor include frontside and backside interconnects....

Full description

Saved in:
Bibliographic Details
Main Authors XIE, Ruilong, ANDERSON, Brent A, RADENS, Carl, CHU, Albert M
Format Patent
LanguageEnglish
French
Published 13.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor structure is provided that includes a stacked transistor including at least one transistor stacked over another transistor and a non-stacked transistor integrated on a same wafer. Both the stacked transistor and the non-stacked transistor include frontside and backside interconnects. L'invention concerne une structure à semi-conducteurs qui comprend un transistor empilé comportant au moins un transistor empilé sur un autre transistor et un transistor non empilé intégré sur une même tranche. Le transistor empilé et le transistor non empilé comprennent chacun des interconnexions avant et arrière.
Bibliography:Application Number: WO2023CN134208