METHOD FOR MANUFACTURING ULTRA-THIN TYPE SEMICONDUCTOR DIE

• Main Authors: SONG, Juneo, YUN, Hyeong Seon, HAN, Young Hun, MOON, Ji Hyung
• Format: Patent
• Language: English; French; Korean
• Published: 06.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention relates to a method for manufacturing an ultra-thin type semiconductor die in which a sapphire substrate of a semiconductor die is molded in an ultra-thin type by bonding, to a second substrate, a semiconductor layer formed on the top surface of a first substrate, and then molding the first substrate in an ultra-thin type, thereby manufacturing a smaller semiconductor light emitting device or power semiconductor device. La présente invention se réfère à un procédé de fabrication d'une puce semi-conductrice de type ultramince, dans lequel un substrat de saphir d'une puce semi-conductrice est moulé en un type ultramince par la liaison, à un second substrat, d'une couche semi-conductrice formée sur la surface supérieure d'un premier substrat ; et le premier substrat est ensuite moulé en un type ultramince pour fabriquer ainsi un dispositif électroluminescent semi-conducteur ou un dispositif semi-conducteur de puissance plus petit. 본 발명은 제1 기판의 상면에 형성된 반도체층과 제2 기판을 접합시킨 후, 제1 기판을 초박형으로 성형함으로써 보다 소형의 반도체 발광 소자 또는 전력반도체 소자를 제조할 수 있는, 반도체 다이의 사파이어 기판이 초박형(Ultra-thin Type)으로 성형된 초박형 반도체 다이의 제조 방법에 관한 것이다.