CHEMICAL-MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: LEE, Jeong Ho, KIM, Seok Joo
• Format: Patent
• Language: English; French; Korean
• Published: 02.05.2024
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES

Provided are cerium oxide particles for chemical-mechanical polishing and a chemical-mechanical polishing slurry composition comprising same. By combining the cerium oxide particles that are characteristic of the present invention with a cationic polymer and a nitride film passivation modifier, it is possible to provide a slurry composition for chemical-mechanical polishing that can maximize the silicon oxide/nitride film selection ratio during an STI polishing process while improving the oxide film polishing speed, and a method for manufacturing a semiconductor device utilizing the slurry composition. L'invention concerne des particules d'oxyde de cérium pour polissage chimico-mécanique et une composition de suspension de polissage chimico-mécanique le comprenant. Par combinaison des particules d'oxyde de cérium qui sont caractéristiques de la présente invention avec un polymère cationique et un modificateur de passivation de film de nitrure, il est possible de fournir une composition de suspension pour polissage chimico-mécanique qui peut maximiser le rapport de sélection d'oxyde de silicium/film de nitrure pendant un processus de polissage STI tout en améliorant la vitesse de polissage par film d'oxyde, ainsi qu'un procédé de fabrication d'un dispositif semi-conducteur utilisant la composition de suspension. 화학적 기계적 연마용 산화 세륨 입자 및 이를 포함하는 화학적 기계적 연마용 슬러리 조성물을 제공한다. 본 발명의 특징적인 산화 세륨 입자와 양이온성 고분자 및 질화막 패시베이션 조절제를 조합 구성함으로써, STI 연마 공정 시 실리콘 산화막/질화막 선택비를 극대화하면서, 산화막 연마속도는 향상시킬 수 있는 화학적 기계적 연마용 슬러리 조성물 및 이를 활용한 반도체 소자의 제조방법을 제공할 수 있다.