TRANSISTOR, INTEGRATED CIRCUIT AND PREPARATION METHOD, AND ELECTRONIC DEVICE

• Main Authors: LIN, Jun, HUANG, Weichuan, ZHANG, Kehao, JIANG, Wei
• Format: Patent
• Language: Chinese; English; French
• Published: 02.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided in the present application are a transistor, an integrated circuit and a preparation method, and an electronic device. The transistor comprises a channel and a gate arranged on the channel. The gate comprises a coverage layer arranged on one side of the channel and a first effective work function layer arranged on the side of the coverage layer that is away from the channel, wherein the material of the coverage layer contains titanium atoms, nitrogen atoms and aluminum atoms, and the effective work function of the coverage layer is related to the proportion of the nitrogen atoms and/or the aluminum atoms in the material. In the transistor provided in the implementations of the present application, the material of a coverage layer contains nitrogen atoms and aluminum atoms, wherein the effective work function of the coverage layer is related to the proportion of the nitrogen atoms in the material, and coverage layers having different effective work functions can be obtained by adjusting the proportion