AVALANCHE PHOTODETECTION ELEMENT, ELECTRONIC DEVICE, AND LIDAR DEVICE
This avalanche photodetection element comprises a photodetection layer, the photodetection layer comprising a first well, a high-concentration doping region provided on the first well, and an anode contact spaced apart from the high-concentration doping region, wherein the conductivity type of the f...
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Main Author | |
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Format | Patent |
Language | English French Korean |
Published |
11.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | This avalanche photodetection element comprises a photodetection layer, the photodetection layer comprising a first well, a high-concentration doping region provided on the first well, and an anode contact spaced apart from the high-concentration doping region, wherein the conductivity type of the first well and the anode contact is p-type, the conductivity type of the high-concentration doping region is n-type, the high-concentration doping region is configured to be biased with a positive bias, and the anode contact is configured to output a signal.
Cet élément de photodétection d'avalanche comprend une couche de photodétection, la couche de photodétection comprenant un premier puits, une région de dopage à haute concentration placée sur le premier puits et un contact d'anode espacé de la région de dopage à haute concentration, le premier puits et le contact d'anode ayant une conductivité de type p, la région de dopage à haute concentration ayant une conductivité de type n, la région de dopage à haute concentration étant conçue pour être polarisée avec une polarisation positive et le contact d'anode étant conçu pour délivrer un signal.
아발란치 광검출 소자는 광검출층,을 포함하되, 광검출층은 제1 웰, 제1 웰 상에 제공되는 고농도 도핑 영역, 및 고농도 도핑 영역으로부터 이격되는 애노드 콘택,을 포함하되, 제1 웰 및 애노드 콘택의 도전형은 p형이고, 고농도 도핑 영역의 도전형은 n형이며, 고농도 도핑 영역은 양의 바이어스로 바이어싱되도록 구성되고, 애노드 콘택은 신호를 출력하도록 구성된다. |
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Bibliography: | Application Number: WO2023KR15363 |