CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE COMPRISING SAME
A semiconductor package according to an embodiment comprises: an insulation layer; a plurality of electrode parts including a through-part extending therethrough from the upper surface of the insulation layer to a partial area thereof; and a connection member embedded in the insulation layer, wherei...
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Main Authors | , , |
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Format | Patent |
Language | English French Korean |
Published |
04.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor package according to an embodiment comprises: an insulation layer; a plurality of electrode parts including a through-part extending therethrough from the upper surface of the insulation layer to a partial area thereof; and a connection member embedded in the insulation layer, wherein the plurality of electrode parts include a first electrode part including a first through-part vertically overlapping the connection member and a second electrode part including a second through-part which does not vertically overlap the connection member, and the size of the first through-part satisfies a range of 80 % to 100 % of the size of the second through-part.
Un boîtier semi-conducteur selon un mode de réalisation comprend : une couche d'isolation ; une pluralité de parties d'électrode comprenant une partie traversante s'étendant à travers celle-ci à partir de la surface supérieure de la couche d'isolation vers une zone partielle de celle-ci ; et un élément de connexion intégré dans la couche d'isolation, la pluralité de parties d'électrode comprenant une première partie d'électrode comprenant une première partie traversante chevauchant verticalement l'élément de connexion et une seconde partie d'électrode comprenant une seconde partie traversante qui ne chevauche pas verticalement l'élément de connexion, et la taille de la première partie traversante satisfaisant une plage de 80 % à 100 % de la taille de la seconde partie traversante.
실시 예에 따른 반도체 패키지는 절연층; 상기 절연층의 상면에서 일부 영역까지 관통하는 관통부를 포함하는 복수의 전극부; 및 상기 절연층 내에 매립된 연결 부재;를 포함하고, 상기 복수의 전극부는, 상기 연결 부재와 수직 방향으로 중첩되는 제1 관통부를 포함하는 제1 전극부와, 상기 연결 부재와 수직 방향으로 중첩되지 않는 제2 관통부를 포함하는 제2 전극부를 포함하고, 상기 제1 관통부의 사이즈는 상기 제2 관통부의 사이즈의 80% 내지 100%의 범위를 만족한다. |
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Bibliography: | Application Number: WO2023KR15221 |