PRECURSOR FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM, METHOD FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM USING SAME, AND SEMICONDUCTOR ELEMENT INCLUDING LANTHANIDE METAL-CONTAINING THIN FILM

• Main Authors: PARK, Yong Joo, OH, Han Sol, KIM, Han Byul, RYU, Beom Seok, LEE, Sang Kyung
• Format: Patent
• Language: English; French; Korean
• Published: 21.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to: a precursor for forming a lanthanide metal-containing thin film, the precursor being characterized by comprising a compound represented by chemical formula 1; a method for forming a lanthanide metal-containing thin film using same; and a semiconductor element including the lanthanide metal-containing thin film. The precursor includes a lanthanide metal core, a cyclopentadienyl ligand providing properties such as a low melting point and high volatility, and a novel amidinate ligand that provides high structural stability, low viscosity, high volatility, high thermal stability, and properties such as being a liquid at room temperature or a solid with a low melting point. Therefore, the precursor exhibits physical properties suitable for use in a thin film formation process and thus can be used to form a high-quality thin film. La présente invention concerne : un précurseur pour former un film mince contenant un métal lanthanide, le précurseur étant caractérisé en ce qu'il comprend un composé représenté par la formule chimique 1 ; un procédé de formation d'un film mince contenant un métal lanthanide faisant appel à celui-ci ; et un élément semi-conducteur comprenant le film mince contenant un métal lanthanide. Le précurseur comprend un noyau métallique lanthanide, un ligand cyclopentadiényle conférant des propriétés telles qu'un point de fusion bas et une volatilité élevée, et un nouveau ligand amidinate qui confère une stabilité structurale élevée, une faible viscosité, une volatilité élevée, une stabilité thermique élevée et des propriétés telles qu'être liquide à température ambiante ou solide à point de fusion bas. Par conséquent, le précurseur présente des propriétés physiques appropriées pour être utilisé dans un procédé de formation de film mince et peut ainsi être utilisé pour former un film mince de haute qualité. 본 발명은 화학식 1로 표시되는 화합물 포함하는 것을 특징으로 하는 란탄족 금속 함유 박막 형성용 전구체, 이를 이용한 란탄족 금속 함유 박막 형성 방법 및 상기 란탄족 금속 함유 박막을 포함하는 반도체 소자에 관한 것으로서, 상기 전구체는 란탄족 금속을 중심 금속 원자로 포함하고, 저융점 및 고휘발성 등의 특성을 제공하는 사이클로펜타디에닐 리간드를 포함하며, 이와 함께, 높은 구조적 안정성, 저점도, 고휘발성, 고내열성 및 상온 액상이거나 또는 낮은 녹는점을 갖는 고체 상태 등의 특성을 제공하는 신규한 아미디네이트 리간드를 포함하여, 박막 형성 공정에 사용하기 적합한 물성을 나타내어 고품질의 박막을 형성할 수 있다.