FORMING METHOD OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND FORMING METHOD OF MEMORY

• Main Authors: CHU, Yaoyao, BAO, Xifei
• Format: Patent
• Language: Chinese; English; French
• Published: 21.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the present disclosure provide a forming method of a semiconductor structure, a semiconductor structure, and a forming method of a memory. The forming method of the semiconductor structure comprises: providing a substrate, and a first contact structure and a second contact structure which are respectively located in an array region and a peripheral region in the substrate; forming a barrier layer covering the peripheral region, and a laminated structure covering the barrier layer and the array region, the laminated structure comprising a plurality of sacrificial layers and supporting layers which are alternately stacked; forming a capacitor hole passing through the laminated structure and exposing the first contact structure, and a first electrode layer covering the inner wall of the capacitor hole; forming an opening in each supporting layer to remove the sacrificial layer covered by the supporting layer; and sequentially forming a dielectric layer and a second electrode layer on the surface o