CONDUCTIVE BACKSIDE LAYER FOR BOW MITIGATION

• Main Authors: HA, Jeongseok, HUANG, Yanhui, SHAIKH, Fayaz A, KWON, Byung Seok, HAMMA, Soumana
• Format: Patent
• Language: English; French
• Published: 08.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided are methods for keeping a semiconductor wafer chucked to an electrostatic chuck. The semiconductor wafer may have a conductive backside layer deposited on a backside of the wafer through backside deposition. The conductive layer may be able increase the electrostatic force between the wafer and the electrostatic chuck and to counteract internal stress the wafer may have due to frontside processing, keeping the wafer substantially flat. L'invention concerne des procédés de maintien d'une tranche semi-conductrice serrée sur un mandrin électrostatique. La tranche semi-conductrice peut avoir une couche arrière conductrice déposée sur une face arrière de la tranche par dépôt sur la face arrière. La couche conductrice peut augmenter la force électrostatique entre la tranche et le mandrin électrostatique et compenser les tensions internes subies par la tranche en raison du traitement de la face avant, maintenant ainsi la tranche sensiblement plate.