BOTTOM UP MOLYBDENUM GAPFILL

Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells. Des modes de réalis...

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Bibliographic Details
Main Authors HADDADIN, Rand, BHATNAGAR, Kunal
Format Patent
LanguageEnglish
French
Published 01.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:Embodiments of the disclosure relate to methods for molybdenum gapfill. Additional embodiments provide a method of forming a molybdenum gapfill without substantial voids. Some embodiments of the disclosure are relevant for higher aspect ratio features including DRAM memory cells. Des modes de réalisation de l'invention concernent des procédés de remplissage de molybdène. Des modes de réalisation supplémentaires concernent un procédé de formation d'un remplissage de molybdène sans vides substantiels. Certains modes de réalisation de l'invention sont pertinents pour des caractéristiques de rapport d'aspect plus élevées comprenant des cellules de mémoire DRAM.
Bibliography:Application Number: WO2023US28529