BATCH PROCESSING APPARATUS, SYSTEMS, AND RELATED METHODS AND STRUCTURES FOR EPITAXIAL DEPOSITION OPERATIONS

• Main Authors: SALINAS, Martin Jeffrey, MORADIAN, Ala, GHAZAL, Peydaye Saheli, DHAMODHARAN, Raja Murali, SUBBANNA, Manjunath, LAU, Shu-Kwan, PATIL, Aniketnitin, SANCHEZ, Errol Antonio C, ZHU, Zuoming
• Format: Patent
• Language: English; French
• Published: 18.01.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels. La présente divulgation concerne un appareil de traitement par lots, des systèmes, et des procédés et des structures associés pour des opérations de dépôt épitaxial. Dans un mode de réalisation, un appareil de traitement de substrat comprend une cassette. La cassette est au moins partiellement supportée par un ensemble socle. La cassette comprend une pluralité de niveaux agencés verticalement les uns par rapport aux autres, chaque niveau de la pluralité de niveaux comprenant une surface de support configurée pour supporter un substrat. Un espacement de niveau entre des niveaux adjacents de la pluralité de niveaux est de 25 mm ou plus, et l'espacement de niveau est défini entre les surfaces de support des niveaux adjacents.