NITROGEN PLASMA TREATMENT FOR BOTTOM-UP GROWTH

• Main Authors: HSU, Chih-Hsun, ZHANG, Aixi, YUE, Shiyu, WANG, Rongjun, LEI, Yu, LEI, Wei, YANG, Tsung-Han, XU, Yi, GAO, Xingyao, GAO, Yongqian, CEN, Xi, WU, Kai, TANG, Xianmin, QI, Zhimin
• Format: Patent
• Language: English; French
• Published: 11.01.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bo...