METHOD FOR CONTROLLING SPECIFIC RESISTIVITY AND STRESS OF TUNGSTEN THROUGH PVD SPUTTERING METHOD

• Main Authors: KANG, Hang, LEE, Ga Yeong, NAKANO, Katsuaki, OH, Do Hyun, OKUBO, Taku, NUMATA, Yukinobu
• Format: Patent
• Language: English; French; Korean
• Published: 28.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method for forming a tungsten (W) film in a semiconductor device, by using a physical vapor deposition (PVD) sputtering method on a semiconductor substrate, the tungsten film forming method comprising: a) a first deposition step of depositing a tungsten film on the semiconductor substrate by using magnetron sputtering with a power density of less than 0.5 W/㎠ ; b) a step of modifying the surface of the deposited tungsten by performing RF bias processing under an inert gas atmosphere; and c) a second deposition step of additionally depositing a tungsten film on the deposited tungsten film by using magnetron sputtering of a power density of 0.5 W/㎠ or more. La présente invention concerne un procédé de formation d'un film de tungstène (W) dans un dispositif à semi-conducteur, à l'aide d'un procédé de pulvérisation par dépôt physique en phase vapeur (PVD) sur un substrat semi-conducteur, le procédé de formation de film de tungstène comprenant : a) une première étape de dépôt consistant à déposer un film de tungstène sur le substrat semi-conducteur à l'aide d'une pulvérisation magnétron ayant une densité de puissance inférieure à 0,5 W/㎠ ; b) une étape de modification de la surface du tungstène déposé par réalisation d'un traitement de polarisation RF sous une atmosphère de gaz inerte ; et c) une deuxième étape de dépôt consistant à déposer en outre un film de tungstène sur le film de tungstène déposé à l'aide d'une pulvérisation magnétron d'une densité de puissance de 0,5 W/㎠ ou plus. 본 발명은, 반도체 기판 상에 물리 기상 증착(Physical Vapor Deposition; PVD) 스퍼터링법을 이용한 반도체 소자의 텅스텐(W) 성막 방법으로서, a) 상기 반도체 기판 상에 0.5 W/㎠ 미만의 전력 밀도의 마그네트론 스퍼터링을 이용하여 텅스텐막을 증착하는 제1증착 단계; b) 불활성 가스 분위기 하에서 RF 바이어스(RF bias) 처리를 실시하여, 증착된 텅스텐의 표면을 개질하는 단계; 및 c) 상기 증착된 텅스텐막 상에 0.5 W/㎠ 이상의 전력 밀도의 마그네트론 스퍼터링을 이용하여 추가로 텅스텐막을 증착하는 제2증착 단계; 를 포함하는 것을 특징으로 하는, 반도체 소자의 텅스텐 성막 방법에 관한 것이다.