MAGNETORESISTANCE EFFECT ELEMENT

• Main Authors: SASAKI Tomoyuki, TANG Zhenyao
• Format: Patent
• Language: English; French; Japanese
• Published: 30.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer, wherein the nonmagnetic layer is present between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic layer undulates with respect to a...