FILM FORMING DEVICE AND FILM FORMING METHOD

• Main Authors: NAGAMACHI, Satoru, TATSUMI, Natsuo, ANDO, Ryota, ANDO, Yasunori
• Format: Patent
• Language: English; French; Japanese
• Published: 16.11.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

This film forming device includes: a vacuum container in which a substrate is disposed; an antenna that generates inductively coupled plasma in the vacuum container and that includes a conductor element and a capacitor element that are electrically connected to each other in series; a high-frequency power supply that supplies high-frequency current to the antenna; and a gas supply mechanism that supplies raw material gas containing C, H, and O into the vacuum container. A carbon-based thin film is formed on the substrate in the vacuum container by a plasma CVD method using the inductively coupled plasma generated in the vacuum container by applying the high-frequency current to the antenna. L'invention concerne un dispositif de formation de film comprenant : un récipient sous vide dans lequel un substrat est disposé ; une antenne qui génère un plasma couplé par induction dans le récipient sous vide et qui comprend un élément conducteur et un élément de condensateur qui sont électriquement connectés l'un à l'autre en série ; une alimentation électrique haute fréquence qui fournit un courant haute fréquence à l'antenne ; et un mécanisme d'alimentation en gaz qui fournit du gaz de matière première contenant C, H et O dans le récipient sous vide. Un film mince à base de carbone est formé sur le substrat dans le récipient sous vide par un procédé CVD au plasma utilisant le plasma couplé par induction généré dans le récipient sous vide par application du courant haute fréquence à l'antenne. 基材が配置される真空容器と、前記真空容器内に誘導結合型プラズマを発生させるものであって、電気的に互いに直列接続された導体要素と容量素子とを有するアンテナと、前記アンテナに高周波電流を供給する高周波電源と、前記真空容器内にＣ、Ｈ及びＯを含む原料ガスを供給するガス供給機構とを備え、前記アンテナに高周波電流を流すことによって当該真空容器内に生じる誘導結合型プラズマを用いたプラズマＣＶＤ法により前記真空容器内の前記基材上に炭素系薄膜を形成する成膜装置。