RUTHENIUM PRECURSOR COMPOSITION, PREPARATION METHOD THEREFOR, AND FORMATION METHOD FOR RUTHENIUM-CONTAINING FILM USING SAME

• Main Authors: KIM, Yun Tae, PARK, Yoon A, HAN, Won Seok, KOH, Wonyong
• Format: Patent
• Language: English; French; Korean
• Published: 19.10.2023
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a ruthenium precursor composition, a preparation method therefor, and a formation method for a ruthenium-containing film using same. According to an embodiment of the present invention, included is a step of reacting a compound represented by chemical formula 4 with an alkali metal carbonate salt represented by chemical formula 5 and 1,5-hexadiene, in an organic solvent, and by controlling a compound represented by chemical formula 1, a compound represented by chemical formula 2 and a compound represented by chemical formula 3 to within a specific content range, a ruthenium precursor composition that is thermally very stable may be provided in an economical and efficient manner. Also, in cases where a ruthenium-containing film is formed by using the ruthenium precursor composition, changes in the composition of the ruthenium precursor composition may be prevented during a process in which the ruthenium precursor composition is vaporized, or even thereafter, production of by-products such as pyrolysis substances or the like may be minimized, and accordingly, deposition results having stable and constant properties may be obtained in a semiconductor process. In this regard, a ruthenium-containing film with guaranteed reproducibility and reliability may be provided. La présente invention concerne une composition de précurseur de ruthénium, son procédé de préparation et un procédé de formation d'un film contenant du ruthénium l'utilisant. Selon un mode de réalisation de la présente invention, il est inclus une étape consistant à faire réagir un composé représenté par la formule chimique 4 avec un sel de carbonate de métal alcalin représenté par la formule chimique 5 et du 1,5-hexadiène, dans un solvant organique, et en contrôlant un composé représenté par la formule chimique 1, un composé représenté par la formule chimique 2 et un composé représenté par la formule chimique 3 à l'intérieur d'une plage de teneur spécifique, une composition de précurseur de ruthénium qui est thermiquement très stable peut être fournie de manière économique et efficace. Également, dans les cas où un film contenant du ruthénium est formé à l'aide de la composition de précurseur de ruthénium, on peut empêcher des variations de composition de la composition de précurseur de ruthénium au cours d'un processus dans lequel la composition de précurseur de ruthénium est vaporisée, ou même ensuite, réduire au minimum la production de sous-produits tels que des substances de pyrolyse ou similaires, et par conséquent, obtenir des résultats de dépôt ayant des propriétés stables et constantes dans un processus à semi-conducteur. À cet égard, un film contenant du ruthénium ayant une reproductibilité et une fiabilité garanties peut être fourni. 본 발명은 루테늄 전구체 조성물, 이의 제조방법, 및 이를 이용한 루테늄-함유 막의 형성 방법에 관한 것이다. 본 발명의 실시예에 따르면, 유기 용매 중에서 화학식 4로 표시되는 화합물을 화학식 5로 표시되는 알칼리 금속 카보네이트염 및 1,5-헥사다이엔과 반응시키는 단계를 포함하고, 화학식 1로 표시되는 화합물, 화학식 2로 표시되는 화합물, 및 화학식 3으로 표시되는 화합물을 특정 함량 범위로 제어함으로써, 열적으로 매우 안정한 루테늄 전구체 조성물을 경제적이고 효율적인 방법으로 제공할 수 있다. 또한, 상기 루테늄 전구체 조성물을 이용하여 루테늄-함유 막을 형성하는 경우, 상기 루테늄 전구체 조성물이 기화되는 과정, 또는 그 이후에도 루테늄 전구체 조성물의 조성이 변하는 것을 방지하고, 열분해 물질 등의 부산물의 생성을 최소화할 수 있으며, 이로 인해 반도체 공정에서 안정적이고 일정한 물성을 갖는 증착 결과를 얻을 수 있어서, 재현성 및 신뢰성이 보장된 루테늄-함유 막을 제공할 수 있다.