GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SAME

• Main Authors: DHASIYAN Arun Kumar, HAYASHI Atsushi, HORI Masaru, AOMINE Nobutaka, ODA Osamu
• Format: Patent
• Language: English; French; Japanese
• Published: 28.09.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Provided is a gallium oxide film manufacturing device with which gallium oxide is epitaxially grown to have excellent crystallinity and excellent flatness. A manufacturing device (1000) includes: a reaction chamber (1100); a substrate disposition unit (1200) positioned in the reaction chamber (1100); an elemental gallium supply device (1300) that supplies Ga to the substrate disposition unit (1200); an elemental oxygen supply unit (1400) that supplies oxygen constituent particles to the substrate disposition unit (1200); and a mixed gas supply device (1800) that supplies mixed gas containing oxygen and ozone to the elemental oxygen supply device (1400). The elemental oxygen supply device 1400 includes a plasma generation unit that converts the mixed gas to plasma. L'invention concerne un dispositif de fabrication de film d'oxyde de gallium avec lequel l'oxyde de gallium est étiré de manière épitaxiale de façon à avoir une excellente cristallinité et une excellente planéité. Un dispositif de fabrication (1000) comprend : une chambre de réaction (1100) ; une unité de disposition de substrat (1200) positionnée dans la chambre de réaction (1100) ; un dispositif d'alimentation en gallium élémentaire (1300) qui fournit le Ga à l'unité de disposition de substrat (1200) ; une unité d'alimentation en oxygène élémentaire (1400) qui fournit des particules composant l'oxygène à l'unité de disposition de substrat (1200) ; et un dispositif d'alimentation en gaz mixte (1800) qui fournit le gaz mixte contenant de l'oxygène et de l'ozone au dispositif d'alimentation en oxygène élémentaire (1400). Le dispositif d'alimentation en oxygène élémentaire (1400) comprend une unité de génération de plasma qui convertit le gaz mixte en plasma. 結晶性に優れるとともに平坦性に優れた酸化ガリウムをエピタキシャル成長させる酸化ガリウム膜の製造装置を提供する。製造装置（１０００）は、反応室（１１００）と、反応室（１１００）の内部に位置する基板配置部（１２００）と、基板配置部（１２００）にＧａを供給するガリウム元素供給装置（１３００）と、基板配置部（１２００）に酸素構成粒子を供給する酸素元素供給装置（１４００）と、酸素元素供給装置（１４００）に酸素とオゾンとを含む混合ガスを供給する混合ガス供給装置（１８００）と、を有する。酸素元素供給装置１４００は、混合ガスをプラズマ化するプラズマ発生部を有する。