SUBSTRATE TREATMENT DEVICE, SUBSTRATE SUPPORT, SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE TREATMENT METHOD, AND PROGRAM

• Main Authors: TAKEBAYASHI Yuji, OKAJIMA Yusaku, MIYANISHI Yuya
• Format: Patent
• Language: English; French; Japanese
• Published: 21.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention comprises: a substrate support that comprises a first support part having a plurality of first columns for supporting a plurality of substrates so as to be spaced apart in the vertical direction, and a second support part having a plurality of second columns for supporting a plurality of plates that are positioned between the plurality of substrates supported by the first support and have a through hole in the center section thereof; a treatment chamber that accommodates the substrate support; and a gas supply unit that supplies gas to the treatment chamber. La présente invention comprend : un support de substrat qui comprend une première partie de support ayant une pluralité de premières colonnes pour supporter une pluralité de substrats de façon à être espacés dans la direction verticale, et une seconde partie de support ayant une pluralité de secondes colonnes pour supporter une pluralité de plaques qui sont positionnées entre la pluralité de substrats supportés par le premier support et ont un trou traversant dans leur section centrale ; une chambre de traitement qui reçoit le support de substrat ; et une unité d'alimentation en gaz qui fournit du gaz à la chambre de traitement. 複数の基板を上下方向に間隔をあけて支持する複数の第１支柱を有する第１支持部と、第１支持部に支持された複数の基板の間に配置され、中央部に貫通孔を有する複数の板を支持する複数の第２支柱を有する第２支持部と、を備える基板支持具と、基板支持具を収容する処理室と、処理室にガスを供給するガス供給部と、を備える技術が提供される。