LIGHT-RECEIVING ELEMENT AND ELECTRONIC APPARATUS

A light-receiving element according to an embodiment of the present disclosure is constituted by a plurality of pixels, wherein a pixel is provided with: a multifocal optical member which has a plurality of optical axes; a semiconductor layer which receives light that is in a given wavelength range...

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Bibliographic Details
Main Authors YOKOCHI, Kaito, OGITA, Tomoharu
Format Patent
LanguageEnglish
French
Japanese
Published 31.08.2023
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Summary:A light-receiving element according to an embodiment of the present disclosure is constituted by a plurality of pixels, wherein a pixel is provided with: a multifocal optical member which has a plurality of optical axes; a semiconductor layer which receives light that is in a given wavelength range and that has passed through the optical member and which performs photoelectric conversion; and a transmission suppressing part which suppresses transmission of the light through a first surface of the semiconductor layer that is located on the opposite side from the side of the semiconductor layer on which the light enters the semiconductor layer. La présente divulgation concerne, selon un mode de réalisation, un élément de réception de la lumière constitué d'une pluralité de pixels, un pixel comprenant : un élément optique multifocal ayant une pluralité d'axes optiques ; une couche semi-conductrice qui reçoit une lumière dans une plage de longueurs d'onde donnée, ayant traversé l'élément optique, et qui effectue une conversion photoélectrique ; et une partie de suppression de transmission qui supprime la transmission de la lumière à travers une première surface de la couche semi-conductrice située sur le côté opposé à la face de la couche semi-conductrice par laquelle la lumière pénètre dans la couche semi-conductrice. 本開示の一実施の形態に係る受光素子は、複数の画素で構成される受光素子であって、画素は、複数の光軸を有する多焦点の光学部材と、光学部材を透過した所定の波長域の光を受光して光電変換する半導体層と、半導体層の光が入射する側と反対側となる第1面において、光が半導体層を透過するのを抑制する透過抑制部と、を備えている。
Bibliography:Application Number: WO2023JP03813