SUBSTRATE PROCESSING DEVICE, AND METHOD FOR MANUFACTURING METAL OXIDE SEMICONDUCTOR

• Main Authors: KIM, Duck Ho, MIN, Kyung In, LEE, Seung Hyun, PARK, Chang Kyun, KIM, Du Ho, KIM, Su Ye, HAN, Jun Hee, KIM, Min Hyuk
• Format: Patent
• Language: English; French; Korean
• Published: 03.08.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a substrate processing device comprising: a first source supply unit for supplying a first source gas; a second source supply unit for supplying a second source gas; a first supply line for connecting the first source supply unit to a spraying unit; a second supply line for connecting the second source supply unit to the spraying unit; a mixing unit provided at the first supply line so as to be arranged between the first source supply unit and the spraying unit; a first connection line for connecting the second supply line to the first supply line and/or the mixing unit; and a first path change unit provided at a first connection point at which the first connection line is connected to the second supply line, wherein the first path change unit changes the flow path of the second source gas so that the second source gas supplied from the second source supply unit is supplied to any one selected from the mixing unit and the spraying unit. La présente invention concerne un dispositif de traitement de substrat comprenant : une première unité d'alimentation en source pour fournir un premier gaz source ; une seconde unité d'alimentation en source pour fournir un second gaz source ; une première ligne d'alimentation pour connecter la première unité d'alimentation de source à une unité de pulvérisation ; une seconde ligne d'alimentation pour connecter la seconde unité d'alimentation de source à l'unité de pulvérisation ; une unité de mélange disposée au niveau de la première ligne d'alimentation de façon à être disposée entre la première unité d'alimentation de source et l'unité de pulvérisation ; une première ligne de connexion pour connecter la seconde ligne d'alimentation à la première ligne d'alimentation et/ou à l'unité de mélange ; et une première unité de changement de trajet disposée au niveau d'un premier point de connexion auquel la première ligne de connexion est connectée à la seconde ligne d'alimentation, la première unité de changement de trajet changeant le trajet d'écoulement du second gaz source de telle sorte que le second gaz source fourni par la seconde unité d'alimentation source est fourni à l'une quelconque sélectionnée parmi l'unité de mélange et l'unité de pulvérisation. 본 발명은 제1 소스가스를 공급하기 위한 제1 소스공급부; 제2 소스가스를 공급하기 위한 제2 소스공급부; 제1 소스공급부와 분사부를 연결하는 제1 공급라인; 제2 소스공급부와 분사부를 연결하는 제2 공급라인; 제1 소스공급부와 분사부 사이에 배치되도록 제1 공급라인에 설치된 혼합부; 제2 공급라인을 제1 공급라인과 혼합부 중에서 적어도 하나에 연결하는 제1 연결라인; 및 제1 연결라인이 제2 공급라인에 연결되는 제1 연결지점에 설치된 제1 경로변경부를 포함하고, 제1 경로변경부는 제2 소스공급부로부터 공급된 제2 소스가스가 혼합부와 분사부 중에서 선택된 어느 하나로 공급되도록 제2 소스가스의 유동경로를 변경하는 것을 특징으로 하는 기판처리장치에 관한 것이다.