METHODS FOR GROWING SINGLE CRYSTAL SILICON INGOTS THAT INVOLVE SILICON FEED TUBE INERT GAS CONTROL

• Main Authors: PANNOCCHIA, Matteo, PORRINI, Maria
• Format: Patent
• Language: English; French
• Published: 13.07.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control are disclosed. Ingot puller apparatus that include a flange that extends radially from a silicon funnel or from a silicon feed tube to reduce backflow of gases from the silicon feed tube into the growth chamber are also disclosed. L'invention concerne des procédés de croissance de lingots de silicium monocristallin qui impliquent une régulation de gaz inerte de tube d'alimentation en silicium. L'invention concerne également un appareil de tirage de lingot qui comprend une bride s'étendant radialement à partir d'un entonnoir de silicium ou à partir d'un tube d'alimentation en silicium pour réduire le reflux de gaz du tube d'alimentation en silicium dans la chambre de croissance.