MULTI-ACTIVE-REGION SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

• Main Authors: TAN, Shaoyang, GOU, Yudan, ZHOU, Li, CHENG, Yang, WANG, Jun, ZHANG, Lichen, LI, Bo, HU, Yiwen, MIN, Dayong
• Format: Patent
• Language: Chinese; English; French
• Published: 13.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A multi-active-region semiconductor structure and a manufacturing method therefor. The multi-active-region semiconductor structure comprises: a (2k-1)th common confinement layer which is located between a kth active layer and a kth tunnel junction and is in contact with the kth tunnel junction, and a (2k)th common confinement layer which is located between a (k+1)th active layer and the kth tunnel junction and is in contact with the kth tunnel junction; the forbidden band width of a kth quantum well layer is smaller than the forbidden band width of a kth first semiconductor layer and the forbidden band width of a kth second semiconductor layer; the total thickness of the (2k-1)th common confinement layer and the (2k)th common confinement layer is greater than the coupling thickness of a critical optical field and is less than or equal to two times of the coupling thickness of the critical optical field; and the thickness of the kth quantum well layer is less than or equal to 1/10 of the (2k-1)th common confin