SOLUTION PROCESS CONCENTRATION CONTROL SYSTEM

• Main Authors: RYU, Hyuk Hyun, BAE, Seong Chan
• Format: Patent
• Language: English; French; Korean
• Published: 08.06.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CONTROLLING; CRYSTAL GROWTH; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; REGULATING; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to a solution process concentration control system that freely changes the concentration of a source required for a deposition process and supplies same to a reactor. To this end, the solution process concentration control system comprises: a solution reaction device having a substrate disposed on a hot plate and including a solution supply member and a solution discharge member for supplying and discharging a reaction solution to the substrate; a first pump that supplies a process solution to the solution reaction device or sucks the discharged process solution to discharge a waste solution; a source solution supply unit that is connected to the first pump to supply a source solution; a second pump that is connected to the source solution supply unit to supply a solute (doping) source (Di water) to the source solution to control the concentration of the solution; and a solute source supply unit that is connected to the second pump to supply a solute source. La présente invention concerne un système de régulation de la concentration d'un traitement en solution qui modifie librement la concentration d'une source requise pour un processus de dépôt et fournit celle-ci à une chambre de réaction. À cet effet, le système de régulation de concentration de traitement en solution comprend : un dispositif de réaction en solution comportant un substrat disposé sur une plaque chaude et comprenant un élément d'alimentation en solution et un élément d'évacuation de solution pour fournir et évacuer une solution de réaction vers le substrat ; une première pompe qui fournit une solution de traitement au dispositif de réaction en solution ou aspire la solution de traitement évacuée pour évacuer une solution usée ; une unité d'alimentation en solution source qui est raccordée à la première pompe pour fournir une solution source ; une seconde pompe qui est raccordée à l'unité d'alimentation en solution source pour fournir une source (eau déionisée) de soluté (dopage) à la solution source afin de réguler la concentration de la solution ; et une unité d'alimentation en source de soluté qui est raccordée à la seconde pompe pour fournir une source de soluté. 본 발명은 증착 공정에 필요한 소스의 농도를 자유롭게 변화시켜 반응기에 공급하는 용액 공정 농도 조절시스템에 관한 것이다. 이를 위해 용액 공정 농도 조절시스템은 핫 플레이트 상부에 기판이 배치되고, 상기 기판에 반응 용액을 공급하거나 배출하는 용액 공급부재 및 용액 배출부재를 포함하는 용액 반응 장치, 상기 용액 반응 장치에 공정용액을 공급하거나 배출된 공정용액을 흡입하여 폐용액을 배출하는 제1 펌프, 상기 제1 펌프에 연결되어 소스 용액을 공급하는 소스 용액 공급부, 상기 소스 용액 공급부에 연결되어 용질(도핑) 소스(Di water)를 소스 용액에 공급하여 용액의 농도를 조절하는 제2 펌프 및 상기 제2 펌프에 연결되어 용질 소스를 공급하는 용질 소스 공급부를 포함한다.