SUBSTRATE PROCESSING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
Provided is a feature having a protrusion and comprising: a reaction tube that processes a substrate; a first heating unit that heats the reaction tube; a second heating unit that heats the protrusion; and a heat-insulating member provided to the protrusion. L'invention concerne une caractérist...
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Main Authors | , , , , |
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Format | Patent |
Language | English French Japanese |
Published |
30.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is a feature having a protrusion and comprising: a reaction tube that processes a substrate; a first heating unit that heats the reaction tube; a second heating unit that heats the protrusion; and a heat-insulating member provided to the protrusion.
L'invention concerne une caractéristique ayant une saillie et comprenant : un tube de réaction qui traite un substrat; une première unité de chauffage qui chauffe le tube de réaction ; une seconde unité de chauffage qui chauffe la saillie ; et un élément d'isolation thermique disposé sur la saillie.
突出部を備え、基板を処理する反応管と、反応管を加熱する第1の加熱部と、突出部を加熱する第2の加熱部と、突出部に設けられる断熱部材と、を備える技術が提供される。 |
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Bibliography: | Application Number: WO2021JP34902 |