PREPARATION METHOD FOR SEMICONDUCTOR PACKAGING MATERIAL OR SUBSTRATE MATERIAL, AND SEMICONDUCTOR PACKAGING MATERIAL OR SUBSTRATE MATERIAL OBTAINED THEREBY AND APPLICATION THEREOF

• Main Authors: WANG, Ke, SHEN, Haibin, FANG, Yuanfeng, CHEN, Shuzhen
• Format: Patent
• Language: Chinese; English; French
• Published: 09.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

The present invention provides a preparation method for a semiconductor packaging material or a substrate material, comprising: providing spherical or amorphous polysiloxane; rising, in an oxidizing gas atmosphere before organic components in polysiloxane particles are completely oxidized, the temperature to 600-800°C for heat treatment, so that a dense silicon oxide layer is formed on the surface of the powder, and the organic components in the heat-treated powder are thermally decomposed into carbon elements; performing calcination to obtain a black spherical or amorphous silicon oxide filler, wherein the calcination temperature is greater than 800°C and less than 1100°C, so as to condense remaining silicon hydroxyl groups; and tightly filling and grading the black spherical or amorphous silicon oxide filler in a resin to form a semiconductor packaging material or a substrate material. The black spherical or amorphous silicon oxide can be directly made into a gray or black semiconductor packaging material o