NICKEL-PHOSPHORUS ALLOY COATED SUBSTRATE, SOLUTION FOR ELECTROLESS PLATING OF NICKEL-PHOSPHORUS ALLOY FILM, AND METHOD FOR PRODUCING NICKEL-PHOSPHORUS ALLOY COATED SUBSTRATE

• Main Authors: TAKIMOTO Ayaka, SASAKI Marie, YOSHIDA Takahiro, SHIMATA Kazumasa
• Format: Patent
• Language: English; French; Japanese
• Published: 08.12.2022
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides: a solution for electroless plating, the solution being capable of reducing the film thickness distribution of an NiP film on the outer peripheral edge of a substrate without deteriorating the corrosion resistance of the NiP film; a method for producing an NiP coated substrate, the method using this solution for electroless plating; and an NiP coated substrate which is able to be produced by this method for producing an NiP coated substrate.　This solution for electroless plating of an NiP film contains nickel ions, hypophosphite ions, a complexing agent and indium ions; and the concentration of the indium ions is from 0.18 ppm to 1.8 ppm. This method for producing an NiP coated substrate comprises a process for forming an NiP film by means of the above-described solution. This NiP coated substrate comprises a substrate and an NiP film that is formed on the substrate; and the NiP film contains indium at a concentration of 70 ppm to 620 ppm. La présente invention concerne : une solution de dépôt autocatalytique, la solution étant en mesure de réduire la distribution d'épaisseur de film d'un film de NiP sur le bord périphérique externe d'un substrat sans détériorer la résistance à la corrosion du film de NiP ; un procédé de production d'un substrat revêtu de NiP, le procédé utilisant cette solution de dépôt autocatalytique ; et un substrat revêtu de NiP qui peut être produit par ce procédé de production un substrat revêtu de NiP.　Cette solution pour le dépôt autocatalytique d'un film de NiP contient des ions de nickel, des ions d'hypophosphite, un agent complexant et des ions d'indium ; et la concentration des ions d'indium est de 0,18 ppm à 1,8 ppm. Ce procédé de production d'un substrat revêtu de NiP comprend un procédé de formation d'un film de NiP au moyen de la solution décrite ci-dessus. Ce substrat revêtu de NiP comprend un substrat et un film de NiP qui est formé sur le substrat ; et le film de NiP contient de l'indium à une concentration de 70 ppm à 620 ppm. ＮｉＰ膜の耐食性を損なうことなく、基板の外周端におけるＮｉＰ膜の膜厚分布を小さくすることができる無電解めっきのための溶液、それを用いたＮｉＰ被覆基板の製造方法、及びそれにより製造することができるＮｉＰ被覆基板を提供する。　ＮｉＰ膜の無電解めっきのための溶液は、ニッケルイオン、次亜リン酸イオン、錯化剤、及びインジウムイオンを含有し、前記インジウムイオンの濃度が０．１８～１．８ｐｐｍである。ＮｉＰ被覆基板の製造方法は、前記溶液によりＮｉＰ膜を形成することを含む。ＮｉＰ被覆基板は、基板と、前記基板上に形成されたＮｉＰ膜と、を有し、前記ＮｉＰ膜はインジウムを７０～６２０ｐｐｍの濃度で含有する。