METHOD FOR PREPARING COMPOUND SEMICONDUCTOR CRYSTAL BY COMBINING CONTINUOUS LEC AND VGF AFTER INJECTION SYNTHESIS

• Main Authors: LI, Xiaolan, SHAO, Huimin, WANG, Shujie, XU, Senfeng, WANG, Yang, SUN, Tongnian, SUN, Niefeng, LIU, Zheng, SHI, Yanlei, FU, Lijie, BU, Aimin
• Format: Patent
• Language: Chinese; English; French
• Published: 08.12.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A method for preparing a compound semiconductor crystal by combining continuous LEC and VGF after injection synthesis, comprising steps such as: step A, vacuumizing a system for preparing a compound and filling same with an inert gas; step B, heating to melt a metal raw material and boron oxide I in a synthetic crucible; step C, heating to melt boron oxide II, and moving a synthetic injection system downwards such that an end portion of an injection synthesis pipe moves into the metal raw material of the synthetic crucible to synthesize a first melt; and step D, slowly reducing the pressure in a VGF crucible to enable the first melt to enter the VGF crucible to form a second melt. An upper portion is a VGF growth portion, and a lower portion is a synthesis portion. The melt enters the VGF growth portion by means of back suction; meanwhile, the VGF growth portion is provided with a seed rod and an observation system, and can also perform gas control. LEC seeding and shouldering at a high temperature gradient a