SEMICONDUCTOR THIN FILM-FORMING METAL PRECURSOR COMPOUND AND METAL-CONTAINING THIN FILM MANUFACTURED USING SAME

• Main Authors: MOON, Ji Won, HONG, Chang Sung, SONG, Ki Chang, KIM, Dong Su, PARK, Yong Joo, KIM, Sang Ho, OH, Han Sol, JANG, Dong Hak, NAM, Hae Won, LEE, Sang Kyung, LEE, Jeong Yeop
• Format: Patent
• Language: English; French; Korean
• Published: 01.12.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a semiconductor thin film-forming metal precursor compound represented by chemical formula 1 and a metal-containing thin film formed using same. La présente invention concerne un composé précurseur de métal formant un film mince semi-conducteur représenté par la formule chimique 1 et un film mince contenant du métal formé à l'aide de celui-ci. 본 발명은 화학식 1로 표시되는 반도체 박막 형성용 금속 전구체 화합물 및 이를 이용하여 형성된 금속 함유 박막에 관한 것이다.