SINGLE-TRANSISTOR STRUCTURE, MULTI-TRANSISTOR STRUCTURE, AND ELECTRONIC APPARATUS

• Main Author: DAI, Mingzhi
• Format: Patent
• Language: Chinese; English; French
• Published: 27.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present application discloses a single-transistor structure, a multi-transistor structure, and an electronic apparatus. The single-transistor structure comprises: a substrate; a trench region, source region, and drain region which are located on the same side of the substrate, wherein the trench region has a first end and a second end which are opposite to each other in an extension direction, the source region electrically contacts the first end, and the drain region electrically contacts the second end; a gate which is located between the source region and the drain region, the gate surrounding a portion of the trench region, and an insulating layer being present between the trench region and a region opposite the gate; and a trench electrode, wherein the trench electrode electrically contacts the trench region exposed by the gate, the trench electrode and a portion of the trench region surrounded by the gate have an overlapping portion, and the trench electrode is insulated from the gate. By using the