METHOD FOR MANUFACTURING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY

• Main Authors: SONG, Yun Heub, CHOI, Chang Hwan, SIM, Jaemin
• Format: Patent
• Language: English; French; Korean
• Published: 13.10.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is a method for manufacturing a ferroelectric-based three-dimensional flash memory. In addition, disclosed are a three-dimensional flash memory for improving ferroelectric polarization characteristics and a manufacturing method therefor. To this end, proposed is a method of performing a rapid cooling process on a ferroelectric layer in a semiconductor structure and removing portions of a barrier metal layer through spaces from which a plurality of sacrificial layers are removed so as to form barrier metal regions isolated from each other. In addition, proposed is a method of forming a stress control pattern and generating stress with a data storage pattern so that orthorhombic characteristics of the data storage pattern are improved. Est divulgué un procédé de fabrication d'une mémoire flash tridimensionnelle ferroélectrique. De plus, l'invention concerne une mémoire flash tridimensionnelle permettant d'améliorer les caractéristiques de polarisation ferroélectrique, et son procédé de fabrication. À cet effet, l'invention concerne un procédé de réalisation d'un processus de refroidissement rapide sur une couche ferroélectrique dans une structure semi-conductrice et d'élimination de parties d'une couche métallique barrière par des espaces desquels une pluralité de couches sacrificielles sont éliminées de manière à former des régions métalliques barrières isolées les unes des autres. De plus, l'invention concerne un procédé de formation d'un motif de régulation de contrainte et de génération de contrainte avec un motif de stockage de données, de façon à améliorer des caractéristiques orthorhombiques du motif de stockage de données. 강유전체 기반의 3차원 플래시 메모리의 제조 방법이 개시된다. 또한, 강유전체 분극 특성을 개선하는 3차원 플래시 메모리 및 그 제조 방법이 개시된다. 이를 위해 반도체 구조체에서 강유전체층에 대한 급속 냉각 공정을 수행하고, 복수의 희생층들이 제거된 공간들을 통해 배리어 메탈층의 일부분들을 제거하여, 서로 격리된 배리어 메탈 영역들을 형성하는 방안을 제안하였다. 또한 스트레스 제어 패턴을 형성하여, 데이터 저장 패턴의 사방정계 특성이 개선되도록 데이터 저장 패턴과의 스트레스를 발생시키는 용도로 사용되는 방안을 제안하였다.