SEMICONDUCTOR DEVICE CAPABLE OF REDUCING SWITCHING LOSS AND MANUFACTURING METHOD THEREFOR

• Main Authors: ZHU, Yuanzheng, YANG, Zhuo, HUANG, Xuequan
• Format: Patent
• Language: Chinese; English; French
• Published: 22.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a semiconductor device capable of reducing switching loss, comprising drain metal. A first-conductivity-type silicon substrate is provided on the drain metal; a first-conductivity-type epitaxial layer is provided on the first-conductivity-type silicon substrate; first-conductivity-type columns and second-conductivity-type columns spaced apart from each other are provided in the first-conductivity-type epitaxial layer; a second-conductivity-type body regions are provided on the surfaces of the first-conductivity-type columns and the second-conductivity-type columns; a heavily doped first-conductivity-type source region and second-conductivity-type source region are provided in each second-conductivity-type body region; the first-conductivity-type source region is electrically connected to substrate metal; the second-conductivity-type source region is electrically connected to source metal, a gate trench is provided in each first-conductivity-type column; isolated gate polysilicon