SEMICONDUCTOR DEVICE CAPABLE OF REDUCING SWITCHING LOSS AND MANUFACTURING METHOD THEREFOR
The present invention provides a semiconductor device capable of reducing switching loss, comprising drain metal. A first-conductivity-type silicon substrate is provided on the drain metal; a first-conductivity-type epitaxial layer is provided on the first-conductivity-type silicon substrate; first-...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English French |
Published |
22.09.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention provides a semiconductor device capable of reducing switching loss, comprising drain metal. A first-conductivity-type silicon substrate is provided on the drain metal; a first-conductivity-type epitaxial layer is provided on the first-conductivity-type silicon substrate; first-conductivity-type columns and second-conductivity-type columns spaced apart from each other are provided in the first-conductivity-type epitaxial layer; a second-conductivity-type body regions are provided on the surfaces of the first-conductivity-type columns and the second-conductivity-type columns; a heavily doped first-conductivity-type source region and second-conductivity-type source region are provided in each second-conductivity-type body region; the first-conductivity-type source region is electrically connected to substrate metal; the second-conductivity-type source region is electrically connected to source metal, a gate trench is provided in each first-conductivity-type column; isolated gate polysilicon |
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Bibliography: | Application Number: WO2021CN125973 |