MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, TRANSISTOR, AND MEMORY

A method for manufacturing a semiconductor structure, a semiconductor structure, a transistor, and a memory. The manufacturing method for a semiconductor structure comprises: providing a semiconductor substrate (10), and forming a gate region and a source/drain region on the semiconductor substrate...

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Bibliographic Details
Main Author MEI, Xiaobo
Format Patent
LanguageChinese
English
French
Published 28.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor structure, a semiconductor structure, a transistor, and a memory. The manufacturing method for a semiconductor structure comprises: providing a semiconductor substrate (10), and forming a gate region and a source/drain region on the semiconductor substrate (10); forming an insulating dielectric layer (40), the insulating dielectric layer (40) covering both the gate region and the source/drain region; patterning the insulating dielectric layer (40) of the source/drain region to form first contact holes (510) exposing the source/drain region; forming a metal silicide (70) at the bottom of each first contact hole (510); patterning the insulating dielectric layer (40) of the gate region to form a second contact hole (520) having an orthographic projection, on the semiconductor substrate (10), located in the gate region; and forming a filling layer (80) in the first contact holes (510) and the second contact hole (520). According to the manufacturing method, the metal sil
Bibliography:Application Number: WO2021CN109340