EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE, PREPARATION METHOD, AND SEMICONDUCTOR DEVICE

• Main Authors: QIAN, Hongtu, PEI, Yi, ZHANG, Hui
• Format: Patent
• Language: Chinese; English; French
• Published: 07.07.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed in embodiments of the present invention are an epitaxial structure of a semiconductor device, a preparation method, and a semiconductor device. The epitaxial structure comprises a substrate and a semiconductor layer located on one side of the substrate; the semiconductor layer at least comprises a buffer layer on one side of the substrate; along a direction from a preset source area to a preset drain area, the buffer layer comprises a first buffer portion and a second buffer portion which are connected to each other; the vertical projection of the first buffer portion on the substrate overlaps with the vertical projection of the preset source area on the substrate; the vertical projection of the second buffer portion on the substrate overlaps with the vertical projection of a preset gate area and the preset drain area on the substrate. Ions are implanted into the buffer layer, and the ion implantation concentration in the second buffer portion is greater than or equal to the ion implantation concent