METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR STRUCTURE

• Main Authors: CHENG, Mingxia, CHEN, Yang
• Format: Patent
• Language: Chinese; English; French
• Published: 07.07.2022
• Subjects: ELECTRICITY

A method for manufacturing a semiconductor structure, and a semiconductor structure, which relate to the technical field of semiconductors. The method for manufacturing a semiconductor structure comprises: providing a substrate (10) (S100); sequentially forming, on the substrate (10) and in a stacked manner, an initial conductive layer (20), an initial first dielectric layer (30), an initial first mask layer (40), an initial second dielectric layer (50), an initial second mask layer (60), and a photoresist layer (70) having a pattern (S200); and etching part of the initial second mask layer (60), part of the initial second dielectric layer (50) and part of the initial first mask layer (40) by means of taking the photoresist layer (70) as a mask plate, so as to form a second dielectric layer (54) of a trapezoid structure, wherein the trapezoid structure is a big-end-down structure (S300), such that the structural strength of the second dielectric layer (54) can be increased, tilting or bending of the second di