MAGNETIC RANDOM ACCESS MEMORY AND READ CIRCUIT THEREOF

A magnetic random access memory and a read circuit thereof. The read circuit comprises a sense amplifier, a reference array, and a read array. The reference array comprises a first reference resistor, a second reference resistor, a first storage unit, a second storage unit, a first controllable swit...

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Bibliographic Details
Main Authors XIONG, Baoyu, SHEN, Ao
Format Patent
LanguageChinese
English
French
Published 23.06.2022
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetic random access memory and a read circuit thereof. The read circuit comprises a sense amplifier, a reference array, and a read array. The reference array comprises a first reference resistor, a second reference resistor, a first storage unit, a second storage unit, a first controllable switch, a second controllable switch, and a switch transistor; a first end of the first reference resistor and a first end of the second reference resistor are separately connected to the switch transistor; a first end of the first storage unit is separately connected to a second end of the first reference resistor and a second end of the second reference resistor; a first end of the second storage unit is separately connected to the second end of the first reference resistor and the second end of the second reference resistor; the second end of the first storage unit is connected to a second end of the first controllable switch; the second end of the second storage unit is connected to a second end of the second contr
Bibliography:Application Number: WO2021CN128924