PVT SOURCE MATERIAL AND PRODUCTION METHOD THEREOF, METHOD AND SYSTEM FOR PRODUCING A SIC CRYSTAL

• Main Authors: SCHAAFF, Friedrich, CERAN, Kagan, TIEFEL, Hilmar Richard, CRÖSSMANN, Ivo
• Format: Patent
• Language: English; French
• Published: 28.07.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas compris- ing Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduc- tion of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range be- tween 1300°C and 1800°C. La présente invention concerne un procédé de production d'un solide en SiC de préférence allongé, en particulier du polytype 3C. Le procédé selon l'invention comprend de préférence au moins les étapes suivantes consistant à : introduire au moins un premier gaz source dans une chambre de traitement, ledit premier gaz source comprenant du Si, introduire au moins un deuxième gaz source dans la chambre de traitement, le second gaz source comprenant du C, mettre sous tension électrique au moins un élément séparateur disposé dans la chambre de traitement afin de chauffer l'élément séparateur, régler une vitesse de dépôt supérieure de plus de 200 µm/h, une pression dans la chambre de traitement de plus de 1 bar étant générée par l'introduction du premier gaz source et/ou du deuxième gaz source, et la surface de l'élément de dépôt étant chauffée à une température comprise entre 1 300 °C et 1 800° C.