MIXED COLOR LIGHT-EMITTING DEVICE
A light-emitting device comprises: a first semiconductor laminated structure configured to emit polychromatic light; and a red light source configured to emit red light, wherein: the first semiconductor laminated structure comprises a first conductive type nitride semiconductor layer, an active laye...
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Main Author | |
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Format | Patent |
Language | English French Korean |
Published |
09.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A light-emitting device comprises: a first semiconductor laminated structure configured to emit polychromatic light; and a red light source configured to emit red light, wherein: the first semiconductor laminated structure comprises a first conductive type nitride semiconductor layer, an active layer disposed on the first conductive type nitride semiconductor layer, and a second conductive type nitride semiconductor layer disposed on the active layer; the active layer has a multi-quantum well structure comprising multiple barrier layers and multiple well layers laminated alternately; and the active layer is configured to emit polychromatic light.
L'invention concerne un dispositif électroluminescent comprenant : une première structure stratifiée semi-conductrice configurée pour émettre une lumière polychromatique ; et une source de lumière rouge configurée pour émettre une lumière rouge, la première structure stratifiée semi-conductrice comprenant une première couche semi-conductrice de nitrure de type conducteur, une couche active disposée sur la première couche semi-conductrice de nitrure de type conducteur, et une seconde couche semi-conductrice de nitrure de type conducteur disposée sur la couche active ; la couche active a une structure de puits quantique multiple comprenant de multiples couches barrières et de multiples couches de puits stratifiées en alternance ; et la couche active est configurée pour émettre une lumière polychromatique.
발광 장치는 다색광을 방출하도록 구성된 제1 반도체 적층 구조, 및 적색광을 방출하도록 구성된 적색광원을 포함하며, 상기 제1 반도체 적층 구조는 제1 도전형 질화물 반도체층, 상기 제1 도전형 질화물 반도체층 상에 위치하는 활성층, 및 상기 활성층 상에 위치하는 제2 도전형 질화물 반도체층을 포함하고, 상기 활성층은 서로 교대로 적층된 복수의 장벽층과 복수의 우물층을 포함하는 다중 양자 우물 구조를 가지며, 상기 활성층은 다색광을 방출하도록 구성된다. |
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Bibliography: | Application Number: WO2021KR18135 |