GATE-ALL-AROUND NANOSHEET FIELD-EFFECT TRANSISTOR AND PRODUCTION METHOD THEREFOR

A gate-all-around nanosheet field-effect transistor (100) and a production method therefor. The nanosheet field-effect transistor (100) comprises: a substrate (10); a semiconductor protrusion (11) arranged on the surface of the substrate (10); an insulating layer (12) formed on two sides of the semi...

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Bibliographic Details
Main Authors BENISTANT, Francis Lionel, HOU, Zhaozhao, XU, Jeffrey Junhao
Format Patent
LanguageChinese
English
French
Published 28.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A gate-all-around nanosheet field-effect transistor (100) and a production method therefor. The nanosheet field-effect transistor (100) comprises: a substrate (10); a semiconductor protrusion (11) arranged on the surface of the substrate (10); an insulating layer (12) formed on two sides of the semiconductor protrusion (11) and covering the surface of the substrate (10), wherein the height of the surface of the insulating layer (12) is less than the height of the semiconductor protrusion (11); and a plurality of nanosheets (13) formed above the semiconductor protrusion (11) at intervals. By using the structure of the nanosheet field-effect transistor (100), the leakage current of the nanosheet field-effect transistor (100) can be reduced, and the switching speed of the nanosheet field-effect transistor (100) can be improved. L'invention concerne un transistor à effet de champ à nanofeuilles à grille enveloppante (100) et son procédé de production. Le transistor à effet de champ à nanofeuilles (100) comprend :
Bibliography:Application Number: WO2020CN122633