GALLIUM OXIDE SINGLE CRYSTAL GRAIN AND METHOD FOR PRODUCING SAME

• Main Authors: MAEDA, Miho, SHIBATA, Hiroyuki, YOSHIKAWA, Jun
• Format: Patent
• Language: English; French; Japanese
• Published: 14.04.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A gallium oxide single crystal grain according to the present invention is an α-Ga2O3 single crystal grain that has a diameter and a height of more than 100 μm. Un grain monocristallin d'oxyde de gallium selon la présente invention est un grain monocristallin d'α-Ga2O3 qui présente un diamètre et une hauteur supérieurs à 100 µm. 本発明の酸化ガリウム単結晶粒子は、α－Ｇａ2Ｏ3単結晶粒子であって、径及び高さが１００μｍを超えるものである。