LAMINATED STRUCTURE

• Main Authors: WATANABE, Morimichi, YOSHIKAWA, Jun, FUKUI, Hiroshi
• Format: Patent
• Language: English; French; Japanese
• Published: 31.03.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

This laminated structure comprises a semiconductor film having a corundum-type crystal structure comprising an α-Ga2O3 or α-Ga2O3-based solid solution on a base substrate. The average film thickness of the semiconductor film is at least 10 μm. The semiconductor film is warped in a protruding or recessed shape and the amount of semiconductor film warpage is 20-64 μm. Cette structure stratifiée comprend un film semi-conducteur ayant une structure cristalline de type corindon comprenant une solution solide à base de α-Ga2O3 or α-Ga2O3 recouvrant un substrat de base. L'épaisseur moyenne du film semi-conducteur est d'au moins 10 µm. Le film semi-conducteur est gauchi pour prendre une forme en saillie ou en retrait et la valeur du gauchissement du film semi-conducteur est de 20 à 64 µm. 本発明の積層構造体は、下地基板上にα－Ｇａ2Ｏ3又はα－Ｇａ2Ｏ3系固溶体からなるコランダム型結晶構造を有する半導体膜を備えた積層構造体であって、半導体膜の平均膜厚が１０μｍ以上であり、半導体膜は凸状又は凹状に反っており、半導体膜の反り量が２０μｍ以上６４μｍ以下のものである。