RESISTIVE RANDOM-ACCESS MEMORY, RESISTIVE ELEMENT AND PREPARATION METHOD THEREFOR

• Main Authors: LIU, Yu, SHEN, Tingying, KANG, Szu-chun, CHIU, Taiwei, WANG, Danyun, SHAN, Lijun
• Format: Patent
• Language: Chinese; English; French
• Published: 10.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Disclosed is a preparation method for a resistive element, comprising the following steps: using an etching process, a deposition process, and a polishing process in a crossed manner to prepare the bottom electrode, the resistive layer, and the top electrode; and in the process of preparing the bottom electrode and the resistive layer, using a sidewall process to optimize at least one of the bottom electrode, the resistive dielectric layer, and the oxygen storage layer, so that the contact area between the bottom electrode and the resistive dielectric layer is reduced, and/or the contact area between the resistive dielectric layer and the oxygen storage layer is reduced. According to the preparation method of the present invention, conductive wires can be formed in the resistive layer, so that a low resistance state and a high resistance state are realized by means of the formation and breakage of the conductive wires. Also disclosed are a resistive element and a resistive random-access memory having same. Un