COBALT COMPOUND, PRECURSOR COMPOSITION INCLUDING SAME, AND METHOD FOR PREPARING THIN FILM USING SAME

• Main Authors: SEOK, Jang-Hyeon, NIM, Min-Hyuk, KIM, Hyo-Suk, PARK, Jung Woo, PARK, Min-Sung
• Format: Patent
• Language: English; French; Korean
• Published: 03.02.2022
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention pertains to a vapor deposition compound that can be deposited as a thin film through vapor deposition. Specifically, the present invention pertains to: a novel cobalt-containing compound applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility, and thermal stability; a precursor composition including the cobalt compound; a method for preparing a thin film using the precursor composition; and a cobalt-containing thin film prepared from the precursor composition. La présente invention concerne un composé de dépôt en phase vapeur qui peut être déposé sous la forme d'une couche mince par dépôt en phase vapeur. Plus particulièrement, la présente invention concerne : un nouveau composé contenant du cobalt pouvant être utilisé dans un dépôt de couche atomique (ALD) ou un dépôt chimique en phase vapeur (CVD) et ayant une excellente réactivité, une faible volatilité et une excellente stabilité thermique ; une composition de précurseur comprenant le composé de cobalt ; un procédé de préparation d'une couche mince à l'aide de la composition de précurseur ; et une couche mince contenant du cobalt préparé à partir de la composition de précurseur. 본 발명은 기상 증착을 통하여 박막 증착이 가능한 기상 증착 화합물에 관한 것으로, 구체적으로는 원자층 증착법 (Atomic Layer Deposition, ALD) 또는 화학 기상 증착법 (Chemical Vapor Deposition, CVD)에 적용가능하고, 반응성, 휘발성 및 열적 안정성이 우수한 신규 코발트 함유 화합물, 상기 코발트 화합물을 포함하는 전구체 조성물, 상기 전구체 조성물을 이용한 박막의 제조방법, 및 상기 전구체 조성물로 제조된 코발트-함유 박막에 관한 것이다.